N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 Infineon IPW65R080CFDAFKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
391 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
167 nC @ 10 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Country of Origin
China
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 13,829.70
₹ 460.99 Each (In a Tube of 30) (Exc. GST)
₹ 16,319.05
₹ 543.968 Each (In a Tube of 30) (inc. GST)
30
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 13,829.70
₹ 460.99 Each (In a Tube of 30) (Exc. GST)
₹ 16,319.05
₹ 543.968 Each (In a Tube of 30) (inc. GST)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
391 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
167 nC @ 10 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Country of Origin
China
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products