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  • Rs 18,010.67
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Infineon, TZ425N16KOFHPSA1, Thyristor, 1600V 425A, 250mA 5-Pin, BG-PB501-1
  • Maximum Holding Current 300mA
  • Maximum Operating Temperature +125 °C
  • Repetitive Peak Off-State Current 80mA
  • Repetitive Peak Forward Blocking Voltage 1800V
  • Repetitive Peak Reverse Voltage 1600V
See similar products in Thyristors
Infineon IPD053N08N3GATMA1 N-channel MOSFET, 90 A, 80 V IPD053N08N3 G, 3 + 2 Tab-Pin DPAK
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 6.73mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 18 ns
See similar products in MOSFET Transistors
Infineon IRLU3410PBF N-channel MOSFET, 17 A, 100 V IRLR/U3410PbF, 3 + Tab-Pin IPAK
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 6.73mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 7.2 ns
See similar products in MOSFET Transistors
  • Rs 1,016.14
  • Each (In a Tube of 30)
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Infineon IKQ75N120CT2XKSA1 P-channel IGBT, 150 A 1200 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 15.9mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon IPP075N15N3GXKSA1 N-channel MOSFET, 100 A, 150 V IPP075N15N3 G, 3 + Tab-Pin TO-220
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.36mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 25 ns
See similar products in MOSFET Transistors
Infineon IRL3103PBF N-channel MOSFET, 64 A, 30 V IRL3103PbF, 3 + Tab-Pin TO-220AB
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.54mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 8.9 ns
See similar products in MOSFET Transistors
Infineon IPP45P03P4L11AKSA1 P-channel MOSFET, 45 A, 30 V IPP45P03P4L-11, 3 + Tab-Pin TO-220
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 7 ns
See similar products in MOSFET Transistors
Infineon IRF1407PBF N-channel MOSFET, 130 A, 75 V IRF1407PbF, 3 + Tab-Pin TO-220AB
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.67mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 11 ns
See similar products in MOSFET Transistors
Infineon IRF6218PBF P-channel MOSFET, 27 A, 150 V IRF6218PbF, 3 + Tab-Pin TO-220AB
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.54mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 21 ns
See similar products in MOSFET Transistors
Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon IRF3710ZPBF N-channel MOSFET, 59 A, 100 V HEXFET, 3-Pin TO-220AB
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.54mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 17 ns
See similar products in MOSFET Transistors
Infineon IKQ40N120CH3XKSA1 P-channel IGBT, 80 A 1200 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 15.9mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon IKQ40N120CT2XKSA1 P-channel IGBT, 80 A 1200 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 15.9mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon IKQ50N120CH3XKSA1 P-channel IGBT, 100 A 1200 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 15.9mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon IKQ50N120CT2XKSA1 P-channel IGBT, 100 A 1200 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 15.9mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon IKZ50N65ES5XKSA1 P-channel IGBT, 80 A 650 V, 4-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 15.9mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKZ75N65EH5XKSA1 P-channel IGBT, 90 A 650 V, 4-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.3mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKZ75N65ES5XKSA1 P-channel IGBT, 80 A 650 V, 4-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 15.9mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
  • Rs 1,093.02
  • Each (In a Tube of 25)
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Infineon AUIRF1018E N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin TO-220AB
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.67mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 13 ns
See similar products in MOSFET Transistors
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