Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.36 x 4.57 x 15.95mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.81mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
860pF
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₹ 144.82
Each (In a Pack of 10) (Exc. GST)
₹ 170.888
Each (In a Pack of 10) (Including GST)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 144.82
Each (In a Pack of 10) (Exc. GST)
₹ 170.888
Each (In a Pack of 10) (Including GST)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | ₹ 144.82 | ₹ 1,448.20 |
50 - 90 | ₹ 141.92 | ₹ 1,419.20 |
100 - 240 | ₹ 115.30 | ₹ 1,153.00 |
250 - 490 | ₹ 112.99 | ₹ 1,129.90 |
500+ | ₹ 97.43 | ₹ 974.30 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.36 x 4.57 x 15.95mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.81mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
860pF
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.