Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 110-7153PBrand: InfineonManufacturers Part No.: IGW15N120H3FKSA1
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Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

15 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

217 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

875pF

Maximum Operating Temperature

+175 °C

Energy Rating

2.5mJ

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

₹ 12,681.20

₹ 317.03 Each (Supplied in a Tube) (Exc. GST)

₹ 14,963.82

₹ 374.095 Each (Supplied in a Tube) (inc. GST)

Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

40

Available in multiples of 4
40₹ 12,681.20
44₹ 13,949.32
48₹ 15,217.44
52₹ 16,485.56
56₹ 17,753.68
60₹ 19,021.80
64₹ 20,289.92
68₹ 21,558.04
72₹ 22,826.16
76₹ 24,094.28
80₹ 25,362.40
84₹ 26,630.52
88₹ 27,898.64
92₹ 29,166.76
96₹ 30,434.88
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 12,681.20

₹ 317.03 Each (Supplied in a Tube) (Exc. GST)

₹ 14,963.82

₹ 374.095 Each (Supplied in a Tube) (inc. GST)

Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

40

Available in multiples of 4
40₹ 12,681.20
44₹ 13,949.32
48₹ 15,217.44
52₹ 16,485.56
56₹ 17,753.68
60₹ 19,021.80
64₹ 20,289.92
68₹ 21,558.04
72₹ 22,826.16
76₹ 24,094.28
80₹ 25,362.40
84₹ 26,630.52
88₹ 27,898.64
92₹ 29,166.76
96₹ 30,434.88

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
40 - 80₹ 317.03₹ 6,340.60
100 - 180₹ 313.86₹ 6,277.20
200+₹ 310.72₹ 6,214.40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

15 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

217 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

875pF

Maximum Operating Temperature

+175 °C

Energy Rating

2.5mJ

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more