P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1

RS Stock No.: 165-5947Brand: InfineonManufacturers Part No.: SPD09P06PLG
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₹ 88,000.00

₹ 35.20 Each (On a Reel of 2500) (Exc. GST)

₹ 103,840.00

₹ 41.536 Each (On a Reel of 2500) (inc. GST)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1

2500

Available in multiples of 2500
2500₹ 88,000.00
5000₹ 176,000.00
7500₹ 264,000.00
10000₹ 352,000.00
12500₹ 440,000.00
15000₹ 528,000.00
17500₹ 616,000.00
20000₹ 704,000.00
22500₹ 792,000.00
25000₹ 880,000.00
27500₹ 968,000.00
30000₹ 1,056,000.00
32500₹ 1,144,000.00
35000₹ 1,232,000.00
37500₹ 1,320,000.00
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 88,000.00

₹ 35.20 Each (On a Reel of 2500) (Exc. GST)

₹ 103,840.00

₹ 41.536 Each (On a Reel of 2500) (inc. GST)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1
Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500₹ 88,000.00
5000₹ 176,000.00
7500₹ 264,000.00
10000₹ 352,000.00
12500₹ 440,000.00
15000₹ 528,000.00
17500₹ 616,000.00
20000₹ 704,000.00
22500₹ 792,000.00
25000₹ 880,000.00
27500₹ 968,000.00
30000₹ 1,056,000.00
32500₹ 1,144,000.00
35000₹ 1,232,000.00
37500₹ 1,320,000.00
sticker-1112

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
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Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more