Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin D2PAK IRLS3034TRLPBF

RS Stock No.: 130-1025Brand: InfineonManufacturers Part No.: IRLS3034TRLPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

343 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.67mm

Typical Gate Charge @ Vgs

108 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

9.65mm

Product details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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₹ 366.00

₹ 183.00 Each (In a Pack of 2) (Exc. GST)

₹ 431.88

₹ 215.94 Each (In a Pack of 2) (inc. GST)

Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin D2PAK IRLS3034TRLPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2₹ 366.00
4₹ 732.00
6₹ 1,098.00
8₹ 1,464.00
10₹ 1,830.00
12₹ 2,196.00
14₹ 2,562.00
16₹ 2,928.00
18₹ 3,294.00
20₹ 3,660.00
22₹ 4,026.00
24₹ 4,392.00
26₹ 4,758.00
28₹ 5,124.00
30₹ 5,490.00
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 366.00

₹ 183.00 Each (In a Pack of 2) (Exc. GST)

₹ 431.88

₹ 215.94 Each (In a Pack of 2) (inc. GST)

Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin D2PAK IRLS3034TRLPBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2₹ 366.00
4₹ 732.00
6₹ 1,098.00
8₹ 1,464.00
10₹ 1,830.00
12₹ 2,196.00
14₹ 2,562.00
16₹ 2,928.00
18₹ 3,294.00
20₹ 3,660.00
22₹ 4,026.00
24₹ 4,392.00
26₹ 4,758.00
28₹ 5,124.00
30₹ 5,490.00

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

343 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.67mm

Typical Gate Charge @ Vgs

108 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

9.65mm

Product details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more