Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin D2PAK IRLS3034TRLPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.83mm
Length
10.67mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
9.65mm
Product details
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 141,224.00
₹ 176.53 Each (On a Reel of 800) (Exc. GST)
₹ 166,644.32
₹ 208.305 Each (On a Reel of 800) (inc. GST)
800
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 141,224.00
₹ 176.53 Each (On a Reel of 800) (Exc. GST)
₹ 166,644.32
₹ 208.305 Each (On a Reel of 800) (inc. GST)
Stock information temporarily unavailable.
800
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.83mm
Length
10.67mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
9.65mm
Product details
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products