Infineon N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF

RS Stock No.: 130-1007PBrand: InfineonManufacturers Part No.: IRFS7730TRLPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

246 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

271 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₹ 3,771.00

₹ 188.55 Each (Supplied on a Reel) (Exc. GST)

₹ 4,449.78

₹ 222.489 Each (Supplied on a Reel) (inc. GST)

Infineon N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 2
20₹ 3,771.00
22₹ 4,148.10
24₹ 4,525.20
26₹ 4,902.30
28₹ 5,279.40
30₹ 5,656.50
32₹ 6,033.60
34₹ 6,410.70
36₹ 6,787.80
38₹ 7,164.90
40₹ 7,542.00
42₹ 7,919.10
44₹ 8,296.20
46₹ 8,673.30
48₹ 9,050.40
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 3,771.00

₹ 188.55 Each (Supplied on a Reel) (Exc. GST)

₹ 4,449.78

₹ 222.489 Each (Supplied on a Reel) (inc. GST)

Infineon N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 2
20₹ 3,771.00
22₹ 4,148.10
24₹ 4,525.20
26₹ 4,902.30
28₹ 5,279.40
30₹ 5,656.50
32₹ 6,033.60
34₹ 6,410.70
36₹ 6,787.80
38₹ 7,164.90
40₹ 7,542.00
42₹ 7,919.10
44₹ 8,296.20
46₹ 8,673.30
48₹ 9,050.40

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
20 - 40₹ 188.55₹ 1,885.50
50 - 90₹ 169.02₹ 1,690.20
100+₹ 167.50₹ 1,675.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

246 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

271 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more