Infineon StrongIRFET N-Channel MOSFET, 172 A, 60 V, 3-Pin TO-247 IRFP7537PBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 15,890.00
₹ 158.90 Each (Supplied in a Tube) (Exc. GST)
₹ 18,750.20
₹ 187.502 Each (Supplied in a Tube) (inc. GST)
Production pack (Tube)
100
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 15,890.00
₹ 158.90 Each (Supplied in a Tube) (Exc. GST)
₹ 18,750.20
₹ 187.502 Each (Supplied in a Tube) (inc. GST)
Production pack (Tube)
100
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 100 - 130 | ₹ 158.90 | ₹ 3,178.00 |
| 150 - 280 | ₹ 156.89 | ₹ 3,137.80 |
| 300+ | ₹ 154.93 | ₹ 3,098.60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products