Infineon IRF7343PbF N/P-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Series
IRF7343PbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
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₹ 709.30
₹ 70.93 Each (Supplied on a Reel) (Exc. GST)
₹ 836.97
₹ 83.697 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 709.30
₹ 70.93 Each (Supplied on a Reel) (Exc. GST)
₹ 836.97
₹ 83.697 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
10
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Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Series
IRF7343PbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products