P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1

RS Stock No.: 124-9058Brand: InfineonManufacturers Part No.: IPP80P03P4L-04
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

137 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +5 V

Width

4.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Height

15.65mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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₹ 178.95

Each (In a Tube of 50) (Exc. GST)

₹ 211.161

Each (In a Tube of 50) (Including GST)

P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1

50

Available in multiples of 50
50₹ 8,947.50
100₹ 15,229.00
150₹ 22,843.50
200₹ 30,458.00
250₹ 36,147.50
300₹ 43,377.00
350₹ 50,606.50
400₹ 57,836.00
450₹ 65,065.50
500₹ 72,295.00
550₹ 79,524.50
600₹ 86,754.00
650₹ 93,983.50
700₹ 101,213.00
750₹ 108,442.50
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 178.95

Each (In a Tube of 50) (Exc. GST)

₹ 211.161

Each (In a Tube of 50) (Including GST)

P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1
Stock information temporarily unavailable.

50

Available in multiples of 50
50₹ 8,947.50
100₹ 15,229.00
150₹ 22,843.50
200₹ 30,458.00
250₹ 36,147.50
300₹ 43,377.00
350₹ 50,606.50
400₹ 57,836.00
450₹ 65,065.50
500₹ 72,295.00
550₹ 79,524.50
600₹ 86,754.00
650₹ 93,983.50
700₹ 101,213.00
750₹ 108,442.50
sticker-1112

Buy in bulk

quantityUnit pricePer Tube
50 - 50₹ 178.95₹ 8,947.50
100 - 200₹ 152.29₹ 7,614.50
250+₹ 144.59₹ 7,229.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

137 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +5 V

Width

4.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Height

15.65mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more