Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₹ 8,445.00
₹ 84.45 Each (Supplied in a Tube) (Exc. GST)
₹ 9,965.10
₹ 99.651 Each (Supplied in a Tube) (inc. GST)
Production pack (Tube)
100
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 8,445.00
₹ 84.45 Each (Supplied in a Tube) (Exc. GST)
₹ 9,965.10
₹ 99.651 Each (Supplied in a Tube) (inc. GST)
Stock information temporarily unavailable.
Production pack (Tube)
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 100 - 200 | ₹ 84.45 | ₹ 4,222.50 |
| 250 - 450 | ₹ 82.76 | ₹ 4,138.00 |
| 500+ | ₹ 77.95 | ₹ 3,897.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


