Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2
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P.O.A.
Each (On a Reel of 5000) (Exc. GST)
5000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
Each (On a Reel of 5000) (Exc. GST)
Stock information temporarily unavailable.
5000
Stock information temporarily unavailable.
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products