Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Stock information temporarily unavailable.
Please check again later.
₹ 39.71
Each (In a Pack of 25) (Exc. GST)
₹ 46.858
Each (In a Pack of 25) (inc. GST)
Standard
25
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 39.71
Each (In a Pack of 25) (Exc. GST)
₹ 46.858
Each (In a Pack of 25) (inc. GST)
Standard
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | ₹ 39.71 | ₹ 992.75 |
125 - 225 | ₹ 37.96 | ₹ 949.00 |
250 - 600 | ₹ 36.87 | ₹ 921.75 |
625 - 1225 | ₹ 35.85 | ₹ 896.25 |
1250+ | ₹ 32.26 | ₹ 806.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.