Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

RS Stock No.: 110-7425Brand: InfineonManufacturers Part No.: IGW40N65F5FKSA1
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Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

250 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

2500pF

Maximum Operating Temperature

+175 °C

Energy Rating

0.46mJ

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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₹ 251.18

Each (In a Pack of 4) (Exc. GST)

₹ 296.392

Each (In a Pack of 4) (inc. GST)

Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4₹ 1,004.72
8₹ 2,009.44
12₹ 3,014.16
16₹ 4,018.88
20₹ 4,802.00
24₹ 5,762.40
28₹ 6,722.80
32₹ 7,683.20
36₹ 8,643.60
40₹ 9,329.60
44₹ 10,262.56
48₹ 11,195.52
52₹ 12,128.48
56₹ 13,061.44
60₹ 13,994.40
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 251.18

Each (In a Pack of 4) (Exc. GST)

₹ 296.392

Each (In a Pack of 4) (inc. GST)

Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4₹ 1,004.72
8₹ 2,009.44
12₹ 3,014.16
16₹ 4,018.88
20₹ 4,802.00
24₹ 5,762.40
28₹ 6,722.80
32₹ 7,683.20
36₹ 8,643.60
40₹ 9,329.60
44₹ 10,262.56
48₹ 11,195.52
52₹ 12,128.48
56₹ 13,061.44
60₹ 13,994.40

Buy in bulk

quantityUnit pricePer Pack
4 - 16₹ 251.18₹ 1,004.72
20 - 36₹ 240.10₹ 960.40
40 - 96₹ 233.24₹ 932.96
100 - 196₹ 206.67₹ 826.68
200+₹ 204.09₹ 816.36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

250 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

2500pF

Maximum Operating Temperature

+175 °C

Energy Rating

0.46mJ

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more