P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP170PH6327XTSA1
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
3.5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.6mm
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 46.38
Each (In a Pack of 50) (Exc. GST)
₹ 54.728
Each (In a Pack of 50) (inc. GST)
Standard
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 46.38
Each (In a Pack of 50) (Exc. GST)
₹ 54.728
Each (In a Pack of 50) (inc. GST)
Standard
50
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 50 | ₹ 46.38 | ₹ 2,319.00 |
| 100 - 200 | ₹ 45.45 | ₹ 2,272.50 |
| 250 - 450 | ₹ 42.56 | ₹ 2,128.00 |
| 500 - 1200 | ₹ 38.73 | ₹ 1,936.50 |
| 1250+ | ₹ 35.49 | ₹ 1,774.50 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
3.5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.6mm
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products