Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1

RS Stock No.: 911-4805Brand: InfineonManufacturers Part No.: BSP135H6327XTSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 Ω

Channel Mode

Depletion

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

3.7 nC @ 5 V

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Height

1.6mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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₹ 53,750.00

₹ 53.75 Each (On a Reel of 1000) (Exc. GST)

₹ 63,425.00

₹ 63.425 Each (On a Reel of 1000) (inc. GST)

Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 53,750.00

₹ 53.75 Each (On a Reel of 1000) (Exc. GST)

₹ 63,425.00

₹ 63.425 Each (On a Reel of 1000) (inc. GST)

Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1

Stock information temporarily unavailable.

sticker-1112

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 Ω

Channel Mode

Depletion

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

3.7 nC @ 5 V

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Height

1.6mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more