N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK-7
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 466.50
Each (Supplied on a Reel) (Exc. GST)
₹ 550.47
Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
2
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 466.50
Each (Supplied on a Reel) (Exc. GST)
₹ 550.47
Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
2
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 20 - 80 | ₹ 466.50 | ₹ 9,330.00 |
| 100 - 180 | ₹ 453.17 | ₹ 9,063.40 |
| 200 - 480 | ₹ 440.58 | ₹ 8,811.60 |
| 500+ | ₹ 422.96 | ₹ 8,459.20 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK-7
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products