Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Width
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Height
16.27mm
Country of Origin
China
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 95.56
Each (In a Pack of 5) (Exc. GST)
₹ 112.761
Each (In a Pack of 5) (Including GST)
Standard
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 95.56
Each (In a Pack of 5) (Exc. GST)
₹ 112.761
Each (In a Pack of 5) (Including GST)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₹ 95.56 | ₹ 477.80 |
50 - 120 | ₹ 79.02 | ₹ 395.10 |
125 - 245 | ₹ 68.81 | ₹ 344.05 |
250 - 495 | ₹ 67.94 | ₹ 339.70 |
500+ | ₹ 67.09 | ₹ 335.45 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Width
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Height
16.27mm
Country of Origin
China
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.