Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1

RS Stock No.: 223-8519Brand: InfineonManufacturers Part No.: IPG20N06S2L65AATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

₹ 221,600.00

₹ 44.32 Each (On a Reel of 5000) (Exc. GST)

₹ 261,488.00

₹ 52.298 Each (On a Reel of 5000) (inc. GST)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 221,600.00

₹ 44.32 Each (On a Reel of 5000) (Exc. GST)

₹ 261,488.00

₹ 52.298 Each (On a Reel of 5000) (inc. GST)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
Stock information temporarily unavailable.
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Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more