Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Transistor Material
Si
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
₹ 427,400.00
₹ 427.40 Each (On a Reel of 1000) (Exc. GST)
₹ 504,332.00
₹ 504.332 Each (On a Reel of 1000) (inc. GST)
1000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 427,400.00
₹ 427.40 Each (On a Reel of 1000) (Exc. GST)
₹ 504,332.00
₹ 504.332 Each (On a Reel of 1000) (inc. GST)
Stock information temporarily unavailable.
1000

Stock information temporarily unavailable.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Transistor Material
Si
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details