Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Power Management Development Kit
Power Management Function
Power Management
For Use With
Single-Phase Load in Full-Bridge
Kit Classification
Evaluation Board
Featured Device
LPWD5F60
Kit Name
Demonstration Board
Standards/Approvals
RoHS
Country of Origin
Italy
Product Details
The PWD5F60 is an advanced power system-in-package integrating gate drivers and four N-channel power MOSFETs in a compact QFN package. The integrated power MOSFETs have an RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage. The embedded gate drivers feature two comparators that can be used for peak current control or overcurrent protection and integrate bootstrap diodes. This allows to effectively drive loads in a tiny space and to drastically reduce external components and bill of materials. The EVALPWD5F60 demonstrates how to use the PWD5F60 to drive a single-phase load in full-bridge topology. This allows control of both the direction and the value of the current flowing into the load. Typical applications that can benefit from the high integration of the PWD5F60 are, for example, single-phase BLDC motors and fans.
Stock information temporarily unavailable.
₹ 5,965.96
₹ 5,965.96 Each (Exc. GST)
₹ 7,039.83
₹ 7,039.83 Each (inc. GST)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 5,965.96
₹ 5,965.96 Each (Exc. GST)
₹ 7,039.83
₹ 7,039.83 Each (inc. GST)
Stock information temporarily unavailable.
1
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Power Management Development Kit
Power Management Function
Power Management
For Use With
Single-Phase Load in Full-Bridge
Kit Classification
Evaluation Board
Featured Device
LPWD5F60
Kit Name
Demonstration Board
Standards/Approvals
RoHS
Country of Origin
Italy
Product Details
The PWD5F60 is an advanced power system-in-package integrating gate drivers and four N-channel power MOSFETs in a compact QFN package. The integrated power MOSFETs have an RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage. The embedded gate drivers feature two comparators that can be used for peak current control or overcurrent protection and integrate bootstrap diodes. This allows to effectively drive loads in a tiny space and to drastically reduce external components and bill of materials. The EVALPWD5F60 demonstrates how to use the PWD5F60 to drive a single-phase load in full-bridge topology. This allows control of both the direction and the value of the current flowing into the load. Typical applications that can benefit from the high integration of the PWD5F60 are, for example, single-phase BLDC motors and fans.
