Infineon OptiMOS™ 3 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 3
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.58mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Width
10.1mm
Transistor Material
Si
Forward Diode Voltage
1V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 532.40
₹ 266.20 Each (Supplied on a Reel) (Exc. GST)
₹ 628.23
₹ 314.116 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
2
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 532.40
₹ 266.20 Each (Supplied on a Reel) (Exc. GST)
₹ 628.23
₹ 314.116 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
2
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 3
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.58mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Width
10.1mm
Transistor Material
Si
Forward Diode Voltage
1V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products