Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK IRFS7534TRLPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₹ 107,416.00
₹ 134.27 Each (On a Reel of 800) (Exc. GST)
₹ 126,750.88
₹ 158.439 Each (On a Reel of 800) (inc. GST)
800
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 107,416.00
₹ 134.27 Each (On a Reel of 800) (Exc. GST)
₹ 126,750.88
₹ 158.439 Each (On a Reel of 800) (inc. GST)
800
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products