N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

RS Stock No.: 125-0563Brand: ToshibaManufacturers Part No.: TK31E60X,S1X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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₹ 411.90

₹ 205.95 Each (In a Pack of 2) (Exc. GST)

₹ 486.04

₹ 243.021 Each (In a Pack of 2) (inc. GST)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

2

Available in multiples of 2
2₹ 411.90
4₹ 823.80
6₹ 1,235.70
8₹ 1,647.60
10₹ 1,968.70
12₹ 2,362.44
14₹ 2,756.18
16₹ 3,149.92
18₹ 3,543.66
20₹ 3,824.80
22₹ 4,207.28
24₹ 4,589.76
26₹ 4,972.24
28₹ 5,354.72
30₹ 5,737.20
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 411.90

₹ 205.95 Each (In a Pack of 2) (Exc. GST)

₹ 486.04

₹ 243.021 Each (In a Pack of 2) (inc. GST)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Stock information temporarily unavailable.

2

Available in multiples of 2
2₹ 411.90
4₹ 823.80
6₹ 1,235.70
8₹ 1,647.60
10₹ 1,968.70
12₹ 2,362.44
14₹ 2,756.18
16₹ 3,149.92
18₹ 3,543.66
20₹ 3,824.80
22₹ 4,207.28
24₹ 4,589.76
26₹ 4,972.24
28₹ 5,354.72
30₹ 5,737.20

Buy in bulk

quantityUnit pricePer Pack
2 - 8₹ 205.95₹ 411.90
10 - 18₹ 196.87₹ 393.74
20 - 48₹ 191.24₹ 382.48
50 - 98₹ 185.93₹ 371.86
100+₹ 178.49₹ 356.98

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more