N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

RS Stock No.: 125-0541Brand: ToshibaManufacturers Part No.: TK16E60W5,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₹ 74.43

Each (In a Pack of 5) (Exc. GST)

₹ 87.827

Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

5

Available in multiples of 5
5₹ 372.15
10₹ 744.30
15₹ 1,116.45
20₹ 1,488.60
25₹ 1,778.75
30₹ 2,134.50
35₹ 2,490.25
40₹ 2,846.00
45₹ 3,201.75
50₹ 3,455.50
55₹ 3,801.05
60₹ 4,146.60
65₹ 4,492.15
70₹ 4,837.70
75₹ 5,183.25
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 74.43

Each (In a Pack of 5) (Exc. GST)

₹ 87.827

Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5₹ 372.15
10₹ 744.30
15₹ 1,116.45
20₹ 1,488.60
25₹ 1,778.75
30₹ 2,134.50
35₹ 2,490.25
40₹ 2,846.00
45₹ 3,201.75
50₹ 3,455.50
55₹ 3,801.05
60₹ 4,146.60
65₹ 4,492.15
70₹ 4,837.70
75₹ 5,183.25

Buy in bulk

quantityUnit pricePer Pack
5 - 20₹ 74.43₹ 372.15
25 - 45₹ 71.15₹ 355.75
50 - 120₹ 69.11₹ 345.55
125 - 245₹ 67.19₹ 335.95
250+₹ 64.51₹ 322.55

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more