Texas Instruments N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS

RS Stock No.: 827-4919PBrand: Texas InstrumentsManufacturers Part No.: CSD19536KCS
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.51mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₹ 857.24

₹ 428.62 Each (Supplied in a Tube) (Exc. GST)

₹ 1,011.54

₹ 505.772 Each (Supplied in a Tube) (inc. GST)

Texas Instruments N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS
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RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 857.24

₹ 428.62 Each (Supplied in a Tube) (Exc. GST)

₹ 1,011.54

₹ 505.772 Each (Supplied in a Tube) (inc. GST)

Texas Instruments N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS
Stock information temporarily unavailable.
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Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.51mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more