Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Height
0.95mm
Series
STripFET
Forward Diode Voltage
1.1V
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Please check again later.
₹ 110.38
Each (On a Reel of 3000) (Exc. GST)
₹ 130.248
Each (On a Reel of 3000) (Including GST)
3000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 110.38
Each (On a Reel of 3000) (Exc. GST)
₹ 130.248
Each (On a Reel of 3000) (Including GST)
3000
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Height
0.95mm
Series
STripFET
Forward Diode Voltage
1.1V
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.