Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
SuperFET III
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Width
5.3mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Height
21.08mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
1
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
SuperFET III
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Width
5.3mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Height
21.08mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products