N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

RS Stock No.: 146-4403Brand: IXYSManufacturers Part No.: IXFA80N25X3IMPA: 0
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Technical Document

Specifications

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.4V

Mounting Type

Surface Mount

Minimum Gate Threshold Voltage

2.5V

Maximum Operating Temperature

+150 °C

Maximum Gate Threshold Voltage

4.5V

Maximum Drain Source Voltage

250 V

Maximum Gate Source Voltage

±20 V

Series

HiperFET

Height

4.83mm

Length

10.41mm

Width

11.05mm

Maximum Continuous Drain Current

80 A

Maximum Power Dissipation

390 W

Brand

IXYS

Maximum Drain Source Resistance

16 mΩ

Package Type

D2PAK (TO-263)

Typical Gate Charge @ Vgs

83 @ 10 V nC

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₹ 905.30

Each (Exc. GST)

₹ 1,068.25

Each (Including GST)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

1

Available in multiples of 1
1₹ 905.30
2₹ 1,810.60
3₹ 2,715.90
4₹ 3,621.20
5₹ 4,436.00
6₹ 5,323.20
7₹ 6,210.40
8₹ 7,097.60
9₹ 7,984.80
10₹ 7,760.10
11₹ 8,536.11
12₹ 9,312.12
13₹ 10,088.13
14₹ 10,864.14
15₹ 11,640.15
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 905.30

Each (Exc. GST)

₹ 1,068.25

Each (Including GST)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3
Stock information temporarily unavailable.

1

Available in multiples of 1
1₹ 905.30
2₹ 1,810.60
3₹ 2,715.90
4₹ 3,621.20
5₹ 4,436.00
6₹ 5,323.20
7₹ 6,210.40
8₹ 7,097.60
9₹ 7,984.80
10₹ 7,760.10
11₹ 8,536.11
12₹ 9,312.12
13₹ 10,088.13
14₹ 10,864.14
15₹ 11,640.15

Buy in bulk

quantityUnit price
1 - 4₹ 905.30
5 - 9₹ 887.20
10 - 24₹ 776.01
25+₹ 760.49

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.4V

Mounting Type

Surface Mount

Minimum Gate Threshold Voltage

2.5V

Maximum Operating Temperature

+150 °C

Maximum Gate Threshold Voltage

4.5V

Maximum Drain Source Voltage

250 V

Maximum Gate Source Voltage

±20 V

Series

HiperFET

Height

4.83mm

Length

10.41mm

Width

11.05mm

Maximum Continuous Drain Current

80 A

Maximum Power Dissipation

390 W

Brand

IXYS

Maximum Drain Source Resistance

16 mΩ

Package Type

D2PAK (TO-263)

Typical Gate Charge @ Vgs

83 @ 10 V nC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more