Vishay N-Channel MOSFET, 85 A, 100 V, 3-Pin TO-220AB SUP85N10-10-GE3

RS Stock No.: 708-5178PBrand: VishayManufacturers Part No.: SUP85N10-10-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

105 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₹ 13,961.00

₹ 279.22 Each (Supplied in a Tube) (Exc. GST)

₹ 16,473.98

₹ 329.48 Each (Supplied in a Tube) (inc. GST)

Vishay N-Channel MOSFET, 85 A, 100 V, 3-Pin TO-220AB SUP85N10-10-GE3
Select packaging type

Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 13,961.00

₹ 279.22 Each (Supplied in a Tube) (Exc. GST)

₹ 16,473.98

₹ 329.48 Each (Supplied in a Tube) (inc. GST)

Vishay N-Channel MOSFET, 85 A, 100 V, 3-Pin TO-220AB SUP85N10-10-GE3

Stock information temporarily unavailable.

Select packaging type

QuantityUnit pricePer Tube
50 - 90₹ 279.22₹ 2,792.20
100 - 240₹ 254.06₹ 2,540.60
250+₹ 248.98₹ 2,489.80

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

105 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more