N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Vishay SUM70040E-GE3

RS Stock No.: 124-2248Brand: VishayManufacturers Part No.: SUM70040E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

9.65mm

Width

10.41mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₹ 215.84

Each (In a Pack of 5) (Exc. GST)

₹ 254.691

Each (In a Pack of 5) (Including GST)

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Vishay SUM70040E-GE3
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 215.84

Each (In a Pack of 5) (Exc. GST)

₹ 254.691

Each (In a Pack of 5) (Including GST)

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Vishay SUM70040E-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45₹ 215.84₹ 1,079.20
50 - 120₹ 182.13₹ 910.65
125 - 245₹ 167.36₹ 836.80
250 - 495₹ 163.28₹ 816.40
500+₹ 157.52₹ 787.60

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

9.65mm

Width

10.41mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more