Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
111.9 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Typical Gate Charge @ Vgs
154 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.3mm
Length
3.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm
₹ 154,080.00
₹ 51.36 Each (On a Reel of 3000) (Exc. GST)
₹ 181,814.40
₹ 60.605 Each (On a Reel of 3000) (inc. GST)
3000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 154,080.00
₹ 51.36 Each (On a Reel of 3000) (Exc. GST)
₹ 181,814.40
₹ 60.605 Each (On a Reel of 3000) (inc. GST)
Stock information temporarily unavailable.
3000

Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
111.9 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Typical Gate Charge @ Vgs
154 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.3mm
Length
3.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm

