N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SiSS22LDN-T1-GE3

RS Stock No.: 200-6855Brand: VishayManufacturers Part No.: SiSS22LDN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

92.5 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0051 Ω, 0.00365 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

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₹ 66.17

Each (In a Pack of 25) (Exc. GST)

₹ 78.081

Each (In a Pack of 25) (inc. GST)

N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SiSS22LDN-T1-GE3
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 66.17

Each (In a Pack of 25) (Exc. GST)

₹ 78.081

Each (In a Pack of 25) (inc. GST)

N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SiSS22LDN-T1-GE3
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Pack
25 - 100₹ 66.17₹ 1,654.25
125 - 225₹ 58.86₹ 1,471.50
250 - 600₹ 57.35₹ 1,433.75
625 - 1225₹ 56.62₹ 1,415.50
1250+₹ 55.91₹ 1,397.75

Ideate. Create. Collaborate

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

92.5 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0051 Ω, 0.00365 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more