N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3

RS Stock No.: 787-9383Brand: VishayManufacturers Part No.: SIS468DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

80 V

Series

ThunderFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Width

3.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.12mm

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₹ 304.80

₹ 60.96 Each (Supplied as a Tape) (Exc. GST)

₹ 359.66

₹ 71.933 Each (Supplied as a Tape) (inc. GST)

N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 304.80

₹ 60.96 Each (Supplied as a Tape) (Exc. GST)

₹ 359.66

₹ 71.933 Each (Supplied as a Tape) (inc. GST)

N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type
sticker-1112

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quantityUnit pricePer Tape
5 - 20₹ 60.96₹ 304.80
25 - 45₹ 58.45₹ 292.25
50 - 245₹ 56.89₹ 284.45
250 - 495₹ 55.42₹ 277.10
500+₹ 53.21₹ 266.05

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

80 V

Series

ThunderFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Width

3.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.12mm

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more