N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3

RS Stock No.: 134-9725Brand: VishayManufacturers Part No.: SIR668DP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.05 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

1.12mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₹ 158.72

Each (In a Pack of 2) (Exc. GST)

₹ 187.29

Each (In a Pack of 2) (Including GST)

N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 158.72

Each (In a Pack of 2) (Exc. GST)

₹ 187.29

Each (In a Pack of 2) (Including GST)

N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
2 - 18₹ 158.72₹ 317.44
20 - 98₹ 134.06₹ 268.12
100 - 198₹ 124.00₹ 248.00
200 - 498₹ 120.98₹ 241.96
500+₹ 116.71₹ 233.42

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.05 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

1.12mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more