N-Channel MOSFET, 29 A, 150 V, 8-Pin PowerPAK SO-8 Vishay SIR632DP-T1-RE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Length
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
₹ 96.60
Each (In a Pack of 5) (Exc. GST)
₹ 113.988
Each (In a Pack of 5) (Including GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 96.60
Each (In a Pack of 5) (Exc. GST)
₹ 113.988
Each (In a Pack of 5) (Including GST)
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | ₹ 96.60 | ₹ 483.00 |
| 50 - 120 | ₹ 77.89 | ₹ 389.45 |
| 125 - 245 | ₹ 65.16 | ₹ 325.80 |
| 250 - 495 | ₹ 63.86 | ₹ 319.30 |
| 500+ | ₹ 59.88 | ₹ 299.40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Length
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products