Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3

RS Stock No.: 787-9008Brand: VishayManufacturers Part No.: SI4948BEY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₹ 101.44

Each (In a Pack of 5) (Exc. GST)

₹ 119.699

Each (In a Pack of 5) (Including GST)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 101.44

Each (In a Pack of 5) (Exc. GST)

₹ 119.699

Each (In a Pack of 5) (Including GST)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45₹ 101.44₹ 507.20
50 - 245₹ 84.01₹ 420.05
250 - 495₹ 65.75₹ 328.75
500 - 1245₹ 60.94₹ 304.70
1250+₹ 60.18₹ 300.90

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more