Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.: 787-9020PBrand: VishayManufacturers Part No.: SI4532CDY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₹ 33.03

Each (Supplied on a Reel) (Exc. GST)

₹ 38.975

Each (Supplied on a Reel) (Including GST)

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 33.03

Each (Supplied on a Reel) (Exc. GST)

₹ 38.975

Each (Supplied on a Reel) (Including GST)

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Reel
200 - 300₹ 33.03₹ 6,606.00
500 - 800₹ 27.64₹ 5,528.00
1000 - 1800₹ 26.63₹ 5,326.00
2000+₹ 26.10₹ 5,220.00

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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more