Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

RS Stock No.: 787-9055PBrand: VishayManufacturers Part No.: SI1029X-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

190 mA, 300 mA

Maximum Drain Source Voltage

60 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

3 Ω, 8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

1700 nC @ 15 V, 750 nC @ 4.5 V

Width

1.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₹ 27.59

Each (Supplied on a Reel) (Exc. GST)

₹ 32.556

Each (Supplied on a Reel) (Including GST)

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 27.59

Each (Supplied on a Reel) (Exc. GST)

₹ 32.556

Each (Supplied on a Reel) (Including GST)

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Reel
200 - 300₹ 27.59₹ 5,518.00
500 - 800₹ 21.54₹ 4,308.00
1000 - 1800₹ 20.94₹ 4,188.00
2000+₹ 20.68₹ 4,136.00

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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

190 mA, 300 mA

Maximum Drain Source Voltage

60 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

3 Ω, 8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

1700 nC @ 15 V, 750 nC @ 4.5 V

Width

1.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more