Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
19 nC @ 10 V
Width
6.29mm
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₹ 5,278.00
₹ 105.56 Each (Supplied in a Tube) (Exc. GST)
₹ 6,228.04
₹ 124.561 Each (Supplied in a Tube) (inc. GST)
Production pack (Tube)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 5,278.00
₹ 105.56 Each (Supplied in a Tube) (Exc. GST)
₹ 6,228.04
₹ 124.561 Each (Supplied in a Tube) (inc. GST)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 90 | ₹ 105.56 | ₹ 1,055.60 |
| 100 - 240 | ₹ 101.56 | ₹ 1,015.60 |
| 250+ | ₹ 99.53 | ₹ 995.30 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
19 nC @ 10 V
Width
6.29mm
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details


