Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₹ 3,179.00
₹ 63.58 Each (Supplied as a Tape) (Exc. GST)
₹ 3,751.22
₹ 75.024 Each (Supplied as a Tape) (inc. GST)
Production pack (Tape)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 3,179.00
₹ 63.58 Each (Supplied as a Tape) (Exc. GST)
₹ 3,751.22
₹ 75.024 Each (Supplied as a Tape) (inc. GST)
Production pack (Tape)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tape |
---|---|---|
50 - 90 | ₹ 63.58 | ₹ 635.80 |
100 - 240 | ₹ 62.77 | ₹ 627.70 |
250+ | ₹ 61.99 | ₹ 619.90 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details