Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₹ 6,433.00
₹ 128.66 Each (Supplied as a Tape) (Exc. GST)
₹ 7,590.94
₹ 151.819 Each (Supplied as a Tape) (inc. GST)
Production pack (Tape)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 6,433.00
₹ 128.66 Each (Supplied as a Tape) (Exc. GST)
₹ 7,590.94
₹ 151.819 Each (Supplied as a Tape) (inc. GST)
Stock information temporarily unavailable.
Production pack (Tape)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 50 - 90 | ₹ 128.66 | ₹ 1,286.60 |
| 100 - 240 | ₹ 117.68 | ₹ 1,176.80 |
| 250+ | ₹ 115.33 | ₹ 1,153.30 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


