Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30APBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₹ 324.00
₹ 64.80 Each (In a Pack of 5) (Exc. GST)
₹ 382.32
₹ 76.464 Each (In a Pack of 5) (inc. GST)
Standard
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 324.00
₹ 64.80 Each (In a Pack of 5) (Exc. GST)
₹ 382.32
₹ 76.464 Each (In a Pack of 5) (inc. GST)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products