Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₹ 10,198.00
₹ 203.96 Each (Supplied in a Tube) (Exc. GST)
₹ 12,033.64
₹ 240.673 Each (Supplied in a Tube) (inc. GST)
Production pack (Tube)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 10,198.00
₹ 203.96 Each (Supplied in a Tube) (Exc. GST)
₹ 12,033.64
₹ 240.673 Each (Supplied in a Tube) (inc. GST)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 100 | ₹ 203.96 | ₹ 5,099.00 |
125 - 225 | ₹ 194.70 | ₹ 4,867.50 |
250+ | ₹ 187.98 | ₹ 4,699.50 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details