P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z10PBF

RS Stock No.: 145-1871Brand: VishayManufacturers Part No.: IRF9Z10PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

4.65mm

Minimum Operating Temperature

-55 °C

Height

15.49mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₹ 72.99

Each (In a Tube of 50) (Exc. GST)

₹ 86.128

Each (In a Tube of 50) (Including GST)

P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z10PBF
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 72.99

Each (In a Tube of 50) (Exc. GST)

₹ 86.128

Each (In a Tube of 50) (Including GST)

P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z10PBF
Stock information temporarily unavailable.
sticker-1112

Buy in bulk

quantityUnit pricePer Tube
50 - 50₹ 72.99₹ 3,649.50
100 - 200₹ 58.92₹ 2,946.00
250+₹ 57.74₹ 2,887.00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

4.65mm

Minimum Operating Temperature

-55 °C

Height

15.49mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more