Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
6.22mm
Country of Origin
Taiwan, Province Of China
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₹ 1,020.10
₹ 102.01 Each (In a Pack of 10) (Exc. GST)
₹ 1,203.72
₹ 120.372 Each (In a Pack of 10) (inc. GST)
Standard
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,020.10
₹ 102.01 Each (In a Pack of 10) (Exc. GST)
₹ 1,203.72
₹ 120.372 Each (In a Pack of 10) (inc. GST)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₹ 102.01 | ₹ 1,020.10 |
100 - 490 | ₹ 93.96 | ₹ 939.60 |
500 - 990 | ₹ 91.55 | ₹ 915.50 |
1000+ | ₹ 90.39 | ₹ 903.90 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
6.22mm
Country of Origin
Taiwan, Province Of China