Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906ADT-T1-GE3

RS Stock No.: 178-3704Brand: Vishay SiliconixManufacturers Part No.: SiZF906ADT-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Width

6mm

Length

5mm

Typical Gate Charge @ Vgs

100 (Channel 2) nC @ 10 V, 24.5 (Channel 1) nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.7mm

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P.O.A.

Each (On a Reel of 3000) (Exc. GST)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906ADT-T1-GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
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36000P.O.A.
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

P.O.A.

Each (On a Reel of 3000) (Exc. GST)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906ADT-T1-GE3

Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.
sticker-1112

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Width

6mm

Length

5mm

Typical Gate Charge @ Vgs

100 (Channel 2) nC @ 10 V, 24.5 (Channel 1) nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.7mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more