Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China
₹ 172,020.00
₹ 57.34 Each (On a Reel of 3000) (Exc. GST)
₹ 202,983.60
₹ 67.661 Each (On a Reel of 3000) (inc. GST)
3000
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 172,020.00
₹ 57.34 Each (On a Reel of 3000) (Exc. GST)
₹ 202,983.60
₹ 67.661 Each (On a Reel of 3000) (inc. GST)
3000

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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China