N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3

RS Stock No.: 178-3901Brand: Vishay SiliconixManufacturers Part No.: SiA106DJ-T1-GE3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SC-70-6L

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.35mm

Number of Elements per Chip

1

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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₹ 1,412.30

₹ 141.23 Each (In a Pack of 10) (Exc. GST)

₹ 1,666.51

₹ 166.651 Each (In a Pack of 10) (inc. GST)

N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 1,412.30

₹ 141.23 Each (In a Pack of 10) (Exc. GST)

₹ 1,666.51

₹ 166.651 Each (In a Pack of 10) (inc. GST)

N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 40₹ 141.23₹ 1,412.30
50 - 90₹ 139.82₹ 1,398.20
100 - 490₹ 138.42₹ 1,384.20
500 - 990₹ 137.04₹ 1,370.40
1000+₹ 135.66₹ 1,356.60

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SC-70-6L

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.35mm

Number of Elements per Chip

1

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more